View EMP8731-06VF05NRR_7756633.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

esmt preliminary emp8731 elite semiconductor memory technology inc. publication date : oct. 2013 revision : 0.3 1/13 high-psrr, low-noise, 300ma cmos linear regulator with 3 types of output select general description the emp8731 features ultra-high power supply rejection ratio, low output voltage noise, low dropout voltage, low quiescent current and fast transient response. it guar antees delivery of 300ma output current and supports 3 types of output voltages via adj pin. based on its low quiescent current consumption and its less than 1a shutdown mode of logical operation, the emp8731 is ideal for battery-powered applications. the high power supply rejection ratio of the emp8731 holds well for low input voltages typically encountered in battery-operated systems. the regulator is stable with small ceramic capacitive loads (2.2f typical). the emp8731 is available in miniature sot-23-5 packages. applications ? wireless handsets ? pcmcia cards ? dsp core power ? hand-held instruments ? battery-powered systems ? portable information appliances features ? 300ma guaranteed output current ? 60db typical psrr at 1khz ? 130v (v out =3.0v) rms output voltage noise (10hz to 100khz) ? 264mv (v out =2.8v) typical dropout at 300ma ? 60a typical quiescent current ? less than 1a typical shutdown mode ? fast line and load transient response ? 2.2v to 5.5v input range ? auto-discharge during chip disable ? 60s typical turn-on time ? stable with small ceramic output capacitors ? over temperature and over current protection ? 2% output voltage tolerance typical application
esmt preliminary emp8731 elite semiconductor memory technology inc. publication date : oct. 2013 revision : 0.3 2/13 connection diagrams order information emp8731-xxvf05nrr xx output voltage control no. vf05 sot-23-5 package nrr rohs & halogen free package rating: -40 to 85c package in tape & reel order, marking & packing information package vout-a vout-b product id. marking packing 2.5v 3.0v emp8731-02vf05nrr 1.2v 3.3v EMP8731-06VF05NRR sot-23-5 1.8v 2.8v emp8731-09vf05nrr tape & reel 3kpcs
esmt preliminary emp8731 elite semiconductor memory technology inc. publication date : oct. 2013 revision : 0.3 3/13 pin functions name sot-23-5 function in 1 supply voltage input . require a minimum input capacitor of close to 2.2f to ensure stability and sufficient decoupling from the ground pin. gnd 2 ground pin . en 3 enable input. enable the regulator by pulling the en pin high. to keep the regulator on during normal operation, connect the en pin to v in . the en pin must not exceed v in under all operating conditions. adj 4 adjustable control. connecting to gnd to get output voltage-a, connecting to v in to get output voltage-b, use external divider resistors to achieve desired output voltage-c. out 5 output voltage feedback . functional block diagram fast start-up circuit current limit thermal protection error amp. + - in en out gnd bandgap vout select adj fig.1. functional block diagram of emp8731
esmt preliminary emp8731 elite semiconductor memory technology inc. publication date : oct. 2013 revision : 0.3 4/13 absolute maximum ratings (notes 1, 2) in, en, adj -0.3v to 6v out 1.0v to 4.5v power dissipation (note 8) storage temperature range -65c to 150c junction temperature (t j ) 150c lead temperature (soldering, 10 sec.) 260c esd rating human body model 2kv operating ratings (note 1, 2) supply voltage 2.2v to 5.5v operating temperature range -40c to 85c thermal resistance ( ? ja , note 3)) 152c/w (sot-23-5) thermal resistance ( ? jc , note 4)) 81c/w (sot-23-5) electrical characteristics unless otherwise specified, all limits guaranteed for v in = v out +1v (note 5), v en =v in , c in = c out = 2.2f, t a = 25c. boldface limits apply for the operating temperature extremes: -40c and 85c. symbol parameter conditions min typ (note. 9) max units v in input voltage 2.2 5.5 v v out output voltage 1.0 4.5 v -2 +2 v out R 1.8v ,i out = 10ma -3 +3 % of v out (nom) -35 35 v otl output voltage tolerance (note 5) v out 1.8v ,i out = 10ma -50 50 mv i out maximum output current average dc current rating 300 ma i limit output current limit 300 450 ma i out = 0ma 60 supply current i out = 300ma 130 i q shutdown supply current v out = 0v, en = gnd 1 v out = 3.0v i out = 100ma 100 v do dropout voltage(note 6) v out = 3.0v i out = 300ma 275 a line regulation i out = 1ma, (v out + 1v) v in 5.5v (note 5) -0.1 0.01 0.1 %/v v out load regulation 1ma i out 300ma 0.003 %/ma e n output voltage noise v out = 3.0v, i out = 10ma, 10hz f 100khz 130 v rms thermal shutdown temperature 165 t sd thermal shutdown hysteresis 30 v ih , (v out + 1v) v in 5.5v (note 5) 1.2 v en en input threshold v il , (v out + 1v) v in 5.5v (note 5) 0.4 v i en en input bias current en = gnd or v in 0.1 100 na t on turn-on time v out at 95% of final value 60 s t off turn-off time i out = 0ma (note 7) 2.2 ms
esmt preliminary emp8731 elite semiconductor memory technology inc. publication date : oct. 2013 revision : 0.3 5/13 note 1: absolute maximum ratings indicate limits beyond which damage may occur. electrical specifications do not apply when operating the device outside of its rated operating conditions. note 2: all voltages are with respect to the potential at the ground pin. note 3: ja is measured in the natural convection at t a =25 on a high effective thermal conductivity test board (2 layers, 2s0p). note 4: jc represents the resistance to the heat flows the chip to package top case. note 5: condition does not apply to input voltages below 2.2v since this is the minimum input operating voltage. note 6: dropout voltage is measured by reducing v in until v out drops 100mv from its nominal value at v in ?v out = 1v. dropout voltage does not apply to the regulator versions with v out less than 2.2v. note 7: turn-off time is time measured between the enable input just decreasing below v il and the output voltage just decreasing to 10% of its nominal value. note 8: maximum power dissipation for the device is ca lculated using the following equations: ja a t - j(max) t d p ? where t j (max) is the maximum junction temperature, t a is the ambient temperature, and ja is the junction-to-ambient thermal resistance. e.g. for the sot-23-5 package ja = 152c/w, t j (max) = 150c and using t a = 25c, the maximum power dissipation is found to be 0.82w. the derating factor (-1/ ja ) = -6.6mw/c, thus below 25c the power dissipation fi gure can be increased by 6.6mw per degree, and similarity decreased by this factor for temperatures above 25c. note 9: typical values represent the most likely parametric norm
esmt preliminary emp8731 elite semiconductor memory technology inc. publication date : oct. 2013 revision : 0.3 6/13 typical performance characteristics unless otherwise specified, v in = v out (nom) + 1v, v en =v in , c in = c out = 2.2f, t a = 25c psrr vs. frequency (v out =2.8v) psrr vs. frequency (v out =3.0v) cround current vs. v in (v out =1.8v) ground current vs. i out (v out =1.8v) 0.0ua 10.0ua 20.0ua 30.0ua 40.0ua 50.0ua 60.0ua 70.0ua 0.0v 1.0v 2.0v 3.0v 4.0v 5.0v 6.0v ??? ???? ???? ??? ???? ????? ????? ????? ???? ?? ?? ???? ??? ???? ??? ???? output voltage noise output current limit
esmt preliminary emp8731 elite semiconductor memory technology inc. publication date : oct. 2013 revision : 0.3 7/13 typical performance characteristics (cont.) unless otherwise specified, v in = v out (nom) + 1v, v en =v in , c in = c out = 2.2f, t a = 25c enable response disable response line transient (iout=1ma) line transient (iout=100ma) load transient (v out =2.8v, i out =10ma to 100ma) load transient (v out =2.8v, i out =50ma to 100ma)
esmt preliminary emp8731 elite semiconductor memory technology inc. publication date : oct. 2013 revision : 0.3 8/13 application information general description referring to fig.1 as shown in the functional block diagram section, the emp8731 adopts the classical regulator topology in which negative feedback control is used to perform the desired voltage regulating function. the sub vout-select form the feedback circuit which samp les the output voltage for the error amplifier?s non-inverting input. the inverting input is set to the ba ndgap reference voltage. due to its high open-loop gain, the error amplifier ensures that the sampled output feedback voltage at its non-inverting input is virtually equal to the preset bandgap reference voltage. the error amplif ier compares the voltage difference at its inputs and produces an appropriate dr iving voltage to the p-channel mos pass transistor, which controls the amount of current reaching the output. if there are changes in the output voltage due to load changes, the feedback resistors register these changes to the non-inverting input of the error amplifie r. the error amplifier then adjusts its driving voltage to maintain virtual short between it s two input nodes under all loading conditions. the regulation of the output voltage is achieved as a direct result of the error amplifier keeping its input voltages equal. this negative feedback control topology is fu rther augmented by the shutdown, the temperature and current protection circuitry. selecting the output voltage v out can be simply set to v out-a /v out-b by connecting adj pin to gnd/v in via the internal resistors divider in the ic. emp8731 provides adjusted output voltage function al so via a resistor divider is connected to out, adj and gnd. the v out can be calculated by the following equation: r1 = r2 [(v out / v ref )-1] ..............................(1) (fig.2) where v ref = 0.746v and v out is ranging from 1.0v to 4. 5v, the recommended r2 is 240k ? . output capacitor the emp8731 is specially designed for use with ceramic output capacitors of as low as 2.2 f to take advantage of the savings in cost and space, as well as the superior filtering of high frequency noise. capacitors of higher value or other types may be used, but it is important to make sure its equivalent series resistance (esr) be restricted to less than 0.5 ? . the use of larger capacitors with smaller esr values is desirable for applications involving large and fast input or output transients, as well as situations where the application systems are not physically located immediately adjacent to the battery power source. typical ceramic capacitors suitable for use with the emp8731 are x5r and x7r. the x5r and the x7r capacitors are able to maintain their capacitance values to within 20% and 10%, respectively, as the temperature increases. no-load stability the emp8731 is capable of stable operation during no-load conditions, a mandatory feature for some applications such as cmos ram keep-alive operations.
esmt preliminary emp8731 elite semiconductor memory technology inc. publication date : oct. 2013 revision : 0.3 9/13 input capacitor a minimum input capacitance of 2.2f is required for em p8731. the capacitor value may be increased without limit. improper workbench set-ups may have adverse effects on the normal operation of the regulator. a case in point is the instability that may result from long supply lead inductance coupling to the output through the gate capacitance of the pass transistor. this will esta blish a pseudo lcr network, and is likely to happen under high current conditions or near dropout. a 10f tantalum input capacitor will dampen the parasitic lcr action thanks to its high esr. however, cautions should be exercised to avoid regulator short-circuit damage when tantalum capacitors are used, for they are prone to fail in short-circuit operating conditions. power dissipation and thermal shutdown thermal overload results from excessive power dissipation that causes the ic junction temperature to increase beyond a safe operating level. the emp8731 relies on dedicated thermal shutdown circuitry to limit its total power dissipation. an ic junction temperature t j exceeding 165c will trigger the thermal shutdown logic, turning off the p-channel mos pass transistor. the pass transistor turns on again after the junction cools off by about 30c. when continuous thermal overload conditions persist, this thermal shutdown action then results in a pulsed waveform at the output of the regulator. the concept of thermal resistance ja (c/w) is often used to describe an ic junction?s relative readiness in allowing its thermal energy to dissipate to its ambient air. an ic junction with a low thermal resistance is preferred becaus e it is relatively effective in dissipating its thermal energy to its ambient, thus resulting in a relatively low and desirable junction temperature. the relationship between ja and t j is as follows: t j = ja x (p d ) + t a t a is the ambient temperature, and p d is the power generated by the ic and can be written as: p d = i out (v in ? v out ) as the above equations show, it is desirable to work with ics whose ja values are small such that t j does not increase strongly with p d . to avoid thermally overloading the emp87 31, refrain from exceeding the absolute maximum junction temperature rating of 150c under continuous operating conditions. overstressing the regulator with high loading currents and elevated input-to -output differential voltages can increase the ic die temperature significantly. shutdown the emp8731 enters sleep mode when the en pin is low. wh en this occurs, the pass transistor, the error amplifier, and the biasing circuits, including the bandgap reference, are turned off, thus reducing the supply current to typically < 1ua. the low supply current makes the emp8 731 best suited for battery-powered applications. the maximum guaranteed voltage at the en pin to enter sleep mode is 0.4v. a minimum guaranteed voltage of 1.2v at the en pin will activate the emp8731. to constantly keep the regulator on, direct connection of the en pin to the vin pin is allowed.
esmt preliminary emp8731 elite semiconductor memory technology inc. publication date : oct. 2013 revision : 0.3 10/13 application examples 0. v out-a output, adj pin connected to gnd (b) v out-b output, adj pin connected to v in ? v out-c output, adj pin connected to a divider resisters fig.2 the application circuit of emp8731
esmt preliminary emp8731 elite semiconductor memory technology inc. publication date : oct. 2013 revision : 0.3 11/13 package outline drawing sot-23-5 top view side view pin#1 mark 13 54 detail a ee1 e d a a1 l 13 b detail a c min. max. a 0.90 1.45 a1 0.00 0.15 b 0.30 0.50 c 0.08 0.25 d 2.70 3.10 e 1.40 1.80 e1 2.60 3.00 e l 0.30 0.60 0.95 bsc symbol dimension in mm
esmt preliminary emp8731 elite semiconductor memory technology inc. publication date : oct. 2013 revision : 0.3 12/13 revision history revision date description 0.1 2011.12.12 original 0.2 2012.04.02 1. revise output voltage tolerance spec for vout<1.8v option (page 4) 2. revise vdo typing error (page 4) 3. revise package outline drawing (page 11) 0.3 2013.10.16 modify package outline drawing
esmt preliminary emp8731 elite semiconductor memory technology inc. publication date : oct. 2013 revision : 0.3 13/13 important notice all rights reserved. no part of this document may be reproduced or duplicated in any form or by any means without the prior permission of esmt. the contents contained in this docume nt are believed to be accurate at the time of publication. esmt assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. the information contained herein is pr esented only as a guide or examples for the application of our products. no responsibility is assumed by esmt for any infringement of patents, copyrights, or other intellectual property rights of third parties which may result from its use. no license, either express , implied or otherwise, is granted un der any patents, copyrights or other intellectual property righ ts of esmt or others. any semiconductor devices may have in herently a certain rate of failure. to minimize risks associated with cu stomer's application, adequate design and operating safeguards against inju ry, damage, or loss from such failure, should be provided by the customer when making application designs. esmt's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. if products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications.

▲Up To Search▲

Price & Availability of EMP8731-06VF05NRR

	To Download EMP8731-06VF05NRR Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .